Low Dimensional Devices And Their Applications

Project Description

Low dimensional materials such as 1D and 2D materials have been under extensive investigations for optoelectronic and energy generation applications. In this project, we aim to find new devices at the nanoscale, particularly in the field of electronics, photonics, and sensors using low dimensional devices. Materials such as MoS2,MoSe2, WS2, WSe2, graphene, and black phosphorus are new emerging devices that have not been fully investigated yet. These materials exhibit exceptional electrical, optical, and mechanical properties at the nanoscale. At the nanoscale, these materials can have tunable band gaps, which makes them attractive for various applications including biomedical, military, and energy applications.

In this project, novel low dimensional materials such as 1D and 2D materials are being used to create devices such as flexible electronics, nano-solar cells, optoelectronics at the nanoscale, hydrogen sensors, and biological sensors. We use Raman spectroscopy to characterize these devices at the nanoscale. Along with Raman, we use conventional current-voltage characteristics to compare the obtained transfer characteristics to state-of-the-art technologies such as MOSFETs. Using pulsed heating, we were able to show that these materials, such as layered black phosphorus can be a good source for nano-emitters with a large optical bandwidth, which makes it desirable for optical communication applications. We aim to deign nano-LEDs and nanolasers using this concept. We also aim to engineer and design different layers using laser treatments, as in the case of MoS2. Our results shed light on designing nano-optoelectronics with the desired band gap and thickness.

Team Members

List of Publications

  • Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts Yuqiang Ma, Chenfei Shen, Anyi Zhang, Liang Chen, Yihang Liu, Jihan Chen, Qingzhou Liu, Zhen Li, Moh. R. Amer, Tom Nilges, Ahmad N. Abbas, and Chongwu Zhou ACS Nano 2017, 11, 7126-7133
  • Yann-Wen Lan, Carlos M. Torres Jr., Shin-Hung Tsai, Xiaodan Zhu, Yumeng Shi, Ming-Yang Li, Lain-Jong Li, Wen-Kuan Yeh, Kang L. Wang, ‘Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor’, Small, published online August 2016.